Spin Torque Gate Magnetic Field Sensor

Spin-orbit torque provides an efficient pathway to manipulate the magnetic state and magnetization dynamics of materials, which is crucial for energy-efficient operation a variety spintronic devices such as memory, logic, oscillator, neuromorphic computing. Here, we describe experimentally demonstrate strategy realization spin gate field sensor with extremely simple structure by exploiting longitudinal dependence driven switching. Unlike most magnetoresistance sensors require delicate bias achieve linear response external field, can same without any bias, greatly simplifies structure. Furthermore, driving using ac current, dc offset automatically suppressed, eliminates need bridge or compensation circuit. We verify concept newly developed WTe2/Ti/CoFeB trilayer that work linearly in range 3-10 Oe negligible offset.